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Physics (ii) Trivalent (valency 3); like Indium (In), Boron (B), Aluminium (Al), etc. We shall now discuss how the doping changes the number of charge carriers (and hence the conductivity) of semiconductors. Si or Ge belongs to the fourth group in the Periodic table and, therefore, we choose the dopant element from nearby fifth or third group, expecting and taking care that the size of the dopant atom is nearly the same as that of Si or Ge. Interestingly, the pentavalent and trivalent dopants in Si or Ge give two entirely different types of semiconductors as discussed below. (i) n-type semiconductor Suppose we dope Si or Ge with a pentavalent element as shown in Fig. 14.7. When an atom of +5 valency element occupies the position of an atom in the crystal lattice of Si, four of its electrons bond with the four silicon neighbours while the fifth remains very weakly bound to its parent atom. This is because the four electrons participating in FIGURE 14.7 (a) Pentavalent donor atom (As, Sb, bonding are seen as part of the effective core P, etc.) doped for tetravalent Si or Ge giving n- of the atom by the fifth electron. As a result type semiconductor, and (b) Commonly used the ionisation energy required to set this schematic representation of n-type material which shows only the fixed cores of the electron free is very small and even at room substituent donors with one additional effective temperature it will be free to move in the latticeofthesemiconductor.Forexample,the positive charge and its associated extra electron. energy required is ~ 0.01 eV for germanium, and 0.05 eV for silicon, to separate this electron from its atom. This is in contrast to the energy required to jump the forbidden band (about 0.72 eV for germanium and about 1.1 eV for silicon) at room temperature in the intrinsic semiconductor. Thus, the pentavalent dopant is donating one extra electron for conduction and hence is known as donor impurity. The number of electrons made available for conduction by dopant atoms depends strongly upon the doping level and is independent of any increase in ambient temperature. On the other hand, the number of free electrons (with an equal number of holes) generated by Si atoms, increases weakly with temperature. In a doped semiconductor the total number of conduction electrons n is due to the electrons contributed by donors and those generated e intrinsically, while the total number of holes nhis only due to the holes from the intrinsic source. But the rate of recombination of holes would increase due to the increase in the number of electrons. As a result, the number of holes would get reduced further. Thus, with proper level of doping the number of conduction electrons 330 can be made much larger than the number of holes. Hence in an extrinsic Reprint 2025-26