| Class XII |
Physics |
Physics Part-II |
5 |
barrier: (3/2)k T = K ≃ 400 keV, which gives T ~ 3 × 10 K. When fusion is achieved by raising the temperature of the system so that particles have ... |
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| Class XII |
Physics |
Physics Part-II |
5 |
energy. Heliumisnottheonlyelementthatcanbesynthesizedintheinteriorof a star. As the hydrogen in the core gets depleted and becomes helium, the core... |
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| Class XII |
Physics |
Physics Part-II |
5 |
(b) If both the number of protons and the number of neutrons are conserved in each nuclear reaction, in what way is mass converted into energy (or ... |
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| Class XII |
Physics |
Physics Part-II |
5 |
energy per nucleon is nearly constant, about 8 MeV/nucleon. 8. Energies associated with nuclear processes are about a million times larger than che... |
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| Class XII |
Physics |
Physics Part-II |
5 |
of a nucleus determined by electron scattering is found to be slightly different from that determined by alpha-particle scattering. This is because... |
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| Class XII |
Physics |
Physics Part-II |
5 |
light nuclei. This ratio increases to about 3:2 for heavy nuclei. (More neutrons are required to overcome the effect of repulsion among the protons... |
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| Class XII |
Physics |
Physics Part-II |
5 |
+ d is defined by Q = [ mA+ m –bm – C ]c d where the masses refer to the respective nuclei. Determine from the given data the Q-value of the follow... |
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| Class XII |
Physics |
Physics Part-II |
5 |
constant (i.e. independent of A). Reprint 2026-27 |
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| Class XII |
Physics |
Physics Part-II |
6 |
Chapter Fourteen SEMICONDUCTOR ELECTRONICS: MATERIALS,DEVICES AND SIMPLE CIRCUITS 14.1 I NTRODUCTION Devices in which a controlled flow of electron... |
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| Class XII |
Physics |
Physics Part-II |
6 |
work on the principle of vacuum tubes are being replaced by Liquid Crystal Display (LCD) monitors with supporting solid state electronics.Muchbefor... |
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| Class XII |
Physics |
Physics Part-II |
6 |
etc. 324 Most of the currently available semiconductor devices are based on elemental semiconductors Si or Ge and compound inorganic semiconductors... |
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| Class XII |
Physics |
Physics Part-II |
6 |
on the valence band electrons can move freely into it. This is the case with metallic conductors. If there is some gap between the conduction band ... |
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| Class XII |
Physics |
Physics Part-II |
6 |
of 4N energy states, called the conduction band, is completely Reprint 2025-26te zero. Physics The lowest energy level in the conduction band is sh... |
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| Class XII |
Physics |
Physics Part-II |
6 |
possible. Note that the energy gap is so large that electrons cannot be excited from the valence band to the conduction band by thermal excitation.... |
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| Class XII |
Physics |
Physics Part-II |
6 |
lattice spacing a equal arisesatlowtemperatures.Asthetemperatureincreases, to 3.56, 5.43 and 5.66 Å. more thermal energy becomes available to these... |
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| Class XII |
Physics |
Physics Part-II |
6 |
towards negative potential giving the hole current, Ih. The total current, I is thus the sum of the electron current I and the hole current I : e h... |
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| Class XII |
Physics |
Physics Part-II |
6 |
same lattice structure. Why is C insulator while Si and Ge intrinsic semiconductors? E Solution The 4 bonding electrons of C, Si or Ge lie, respect... |
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| Class XII |
Physics |
Physics Part-II |
6 |
now discuss how the doping changes the number of charge carriers (and hence the conductivity) of semiconductors. Si or Ge belongs to the fourth gro... |
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| Class XII |
Physics |
Physics Part-II |
6 |
an atom in the neighbourhood may jump to fill this vacancy, leaving a vacancy or hole at its own site. Thus thehole is available for conduction. No... |
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| Class XII |
Physics |
Physics Part-II |
6 |
impurities (ED) and acceptor impurities (E A also exist. In the energy band diagram of n-type Si semiconductor, the donor energy level E is slightl... |
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| Class XII |
Physics |
Physics Part-II |
6 |
a group IV element but it is a metal because the energy gap in its case is 0 eV. FIGURE 14.9 Energy bands of (a) n-type semiconductor at T > 0K, (b... |
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| Class XII |
Physics |
Physics Part-II |
6 |
drift. We know that in an n-type semiconductor, the r p s n concentration of electrons (number of electrons per unit volume) is more . n compared t... |
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| Class XII |
Physics |
Physics Part-II |
6 |
negative charge develops. Due to this field, an electron on p-side of the junction moves to n-side and a hole on n-side of the junction moves to p-... |
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| Class XII |
Physics |
Physics Part-II |
6 |
Å) and hence X continuous contact at the atomic level will not be possible. The junction E will behave as a discontinuity for the flowing charge ca... |
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| Class XII |
Physics |
Physics Part-II |
6 |
only slightly below the equilibrium value, and only a small number of carriers in the material—those that happen to be in the uppermost energy leve... |
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